A research team from NIMS and the Japan Fine Ceramics Center (JFCC) has developed a next-generation AI device—a hardware component for AI systems—that incorporates an iono-magnonic reservoir. This reservoir controls spin waves (collective excitations of electron spins in magnetic materials), ion dynamics and their interactions.
The work is published in the journal Advanced Science.
The technology demonstrated significantly higher information processing performance than conventional physical reservoir computing devices, underscoring its potential to transform AI technologies.
As AI devices become increasingly sophisticated, demand for energy-efficient, high-performance solutions continues to grow. The newly developed device generates spin waves using antennas integrated with yttrium iron garnet (YIG) magnets, a material critical to its operation.
The interference patterns of these spin waves can be fine-tuned by applying voltage to the magnets and adjusting the number of ions introduced into them.
The device is able to perform computations by leveraging these dynamic interference patterns through an iono-magnonic reservoir. This approach delivers performance that far surpasses conventional physical reservoir computing devices.
This device demonstrated exceptional performance in time-series predictions, achieving error rates less than one tenth those of conventional devices. Its prediction accuracy was evaluated using a standard testing method based on the Mackey–Glass equations, which are commonly used to model complex variations in biological systems.
This technology can be implemented in both magnetic thin films and single crystals, while being miniaturized without performance degradation, making it potentially suitable for various industrial applications.
When integrated with different sensors, it has the potential to enable energy-efficient, high-precision AI devices for a wide range of purposes.
More information:
Wataru Namiki et al, Iono–Magnonic Reservoir Computing With Chaotic Spin Wave Interference Manipulated by Ion‐Gating, Advanced Science (2024). DOI: 10.1002/advs.202411777
National Institute for Materials Science
Citation:
Next-gen AI device utilizes ion-controlled spin wave interference in magnetic materials (2025, January 20)
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